Semiconductor Device Testers

Avtech offers a range of solutions for semiconductor test requirements. Avtech can supply products suitable for many test requirments, including:

  • Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031, etc.)
  • Forward Recovery Voltage and Time Tests (MIL-STD-750-4 Method 4026, etc.)
  • Transistor Switching Time Tests (MIL-PRF-19500, etc.)
  • Phototriac dV/dt Tests
  • Laser Diode Pulse Testing
  • Production Pulsed V-I Tests

Description

Avtech can also provide specialized test jigs designed to minimize parasitic inductance, while providing ease-of-use and safety for the operator. “One of a kind” applications can be accommodated at “near stock” prices. Contact Avtech with your special requirements!

The instruments listed below are particularly suitable for certain semiconductor test requirements, but other models may also be of interest. Our knowledgeable application engineers can guide you to the most suitable model.

All models with the “-B” suffix include IEEE-488.2 GPIB and RS-232 ports, for easy test automation. The basic command set is SCPI compliant, for easu of use.

Visit our Application Notes” area for further assistance.

Reverse Recovery Test Systems

Product Amplitude (max) + to – transition PW Max. PRF Typical Application
AVR-EB2A-B pulse generator +/- 100 mA ≤ 0.3 ns 200 ns 10 kHz Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition A) for low current diodes
AVR-EB4-B pulse generator +2A / -4A ≤ 4.5 ns 2-20 us 100 Hz Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition B) for medium current diodes
AVR-EB5-B pulse generator +4A / -4A ≤ 100 ns 0.2-1 ms 10 Hz Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition B) for PIN diode lifetime characterization
AVR-EB7-B pulse generator +200mA / -200mA ≤ 2.5 ns 200 ns 5 kHz Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition B) for small-signal diodes
AVR-CC2-B pulse generator +80A / -40A set by L, C 2.5 us 100 Hz Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.5 Condition C) for high-power diodes
AVR-CD1-B pulse generator to +10A 20-200 A/us 2 us 100 Hz Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition D) for medium current diodes and MOSFET parasitic diodes
AVR-CD2-B pulse generator to +40A 70-200 A/us 5 us 10 Hz Reverse Recovery Time Tests (MIL-STD-750-3 Method 3473.1 Condition A) for MOSFET body diodes
AVR-EBT1-B pulse generator +20mA / -10V ≤ 300 ps 20 ns 10 kHz Transition time measurement of step recovery diodes (SRDs)

Forward Recovery Time Test Systems

Product Amplitude (max) transition time PW Max. PRF Typical Application
AVR-EBF8-B pulse generator +0.2A 0.4 ns 100 ns 5 kHz Forward Recovery Time Tests (MIL-STD-750-4 Method 4026.3)
AVR-EBF6-B pulse generator +1A 10 ns 0.2 – 10 us 10 kHz Forward Recovery Time Tests (MIL-STD-750-4 Method 4026.3)
AVR-EBF10-B pulse generator +10A 30 ns 1 – 10 us 100 Hz Forward Recovery Time Tests (MIL-STD-750-4 Method 4026.3)