Description
Avtech can also provide specialized test jigs designed to minimize parasitic inductance, while providing ease-of-use and safety for the operator. “One of a kind” applications can be accommodated at “near stock” prices. Contact Avtech with your special requirements!
The instruments listed below are particularly suitable for certain semiconductor test requirements, but other models may also be of interest. Our knowledgeable application engineers can guide you to the most suitable model.
All models with the “-B” suffix include IEEE-488.2 GPIB and RS-232 ports, for easy test automation. The basic command set is SCPI compliant, for easu of use.
Visit our Application Notes” area for further assistance.
Reverse Recovery Test Systems
| Product | Amplitude (max) | + to – transition | PW | Max. PRF | Typical Application |
|---|---|---|---|---|---|
| AVR-EB2A-B pulse generator | +/- 100 mA | ≤ 0.3 ns | 200 ns | 10 kHz | Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition A) for low current diodes |
| AVR-EB4-B pulse generator | +2A / -4A | ≤ 4.5 ns | 2-20 us | 100 Hz | Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition B) for medium current diodes |
| AVR-EB5-B pulse generator | +4A / -4A | ≤ 100 ns | 0.2-1 ms | 10 Hz | Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition B) for PIN diode lifetime characterization |
| AVR-EB7-B pulse generator | +200mA / -200mA | ≤ 2.5 ns | 200 ns | 5 kHz | Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition B) for small-signal diodes |
| AVR-CC2-B pulse generator | +80A / -40A | set by L, C | 2.5 us | 100 Hz | Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.5 Condition C) for high-power diodes |
| AVR-CD1-B pulse generator | to +10A | 20-200 A/us | 2 us | 100 Hz | Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition D) for medium current diodes and MOSFET parasitic diodes |
| AVR-CD2-B pulse generator | to +40A | 70-200 A/us | 5 us | 10 Hz | Reverse Recovery Time Tests (MIL-STD-750-3 Method 3473.1 Condition A) for MOSFET body diodes |
| AVR-EBT1-B pulse generator | +20mA / -10V | ≤ 300 ps | 20 ns | 10 kHz | Transition time measurement of step recovery diodes (SRDs) |
Forward Recovery Time Test Systems
| Product | Amplitude (max) | transition time | PW | Max. PRF | Typical Application |
|---|---|---|---|---|---|
| AVR-EBF8-B pulse generator | +0.2A | 0.4 ns | 100 ns | 5 kHz | Forward Recovery Time Tests (MIL-STD-750-4 Method 4026.3) |
| AVR-EBF6-B pulse generator | +1A | 10 ns | 0.2 – 10 us | 10 kHz | Forward Recovery Time Tests (MIL-STD-750-4 Method 4026.3) |
| AVR-EBF10-B pulse generator | +10A | 30 ns | 1 – 10 us | 100 Hz | Forward Recovery Time Tests (MIL-STD-750-4 Method 4026.3) |
