Temperature Dependent Lifetime Measurements for Characterization of Narrow-Band Semiconductors

The WT-2000MCT is a special design for µ-PCD lifetime measurement at different sample temperatures.


Features and System Specifications:

  • Sample size: maximum 100 mm in diameter
  • Temperature range: from 80 K to 325 K
  • Cooling time: < 0.2 K

Operating modes:

  • Whole wafer mapping at a preselected stabilized temperature
  • Single-point lifetime scan as a function of temperature


  • Minority carrier lifetime as a function of temperature
  • Excels in measuring lifetime in narrow band semiconductors, where excess carriers are thermally excited at room temperature
  • Materials: HgCdTe, InSb, GaAs, etc.