Carrier Lifetime (µ-PCD, QSS-µPCD)

List 6 product

PV-2000A

Features and System specifications: It is a new integrated platform with the following capabilities: SPV Diffusion …

WT-1200

Low Cost, Non-Contact Single-Point Measurement in Silicon

Both WT-1200 and WT-1200B provide fast, non-contact carrier lifetime measurement method that is capable of characterizing silicon material in each process step of solar cell manufacturing.

WT-1200 is designed to measure wafers from as-cut wafer to the finished solar cell. WT-1200B is a model for block measurements.

WT-1200A

Quasi-Steady-State µ-PCD whit Quality of Decay control (QSS µ-PCD QD). Quality control of wafers and solar cells at different stages of production.

WT-1200B

Low Cost, Non-Contact Single-Point Measurement in Silicon

Both WT-1200 and WT-1200B provide fast, non-contact carrier lifetime measurement method that is capable of characterizing silicon material in each process step of solar cell manufacturing.

WT-1200 is designed to measure wafers from as-cut wafer to the finished solar cell. WT-1200B is a model for block measurements.

WT-2000PVN

The WT-2000PVN is a table top measurement system, capable of performing a variety of measurements on PV cells, wafers, and blocks. The base system includes the overhead functions, and you configure the measurement capabilities to match your specific needs, by selecting from the options below.

WT-2010D

The WT-2000D is a complete measurement tool for monitoring quality of silicon blocks by measuring Carrier recombination lifetime and resistivity. The system provides fast, non-contact measurements (single-point, line scans and/or maps) on silicon blocks in size up to 210x210x500 mm. It has manual and automatic measurement modes and manual block loading capabilities.

Carrier recombination lifetime is a primary quality control parameter for multi-crystalline silicon blocks. The measurement is based on µ-PCD technique.

Resistivity is measured based on eddy current technique.