FB-i28
Fully Automatic Wire Bonder
The FB-i28 is a sophisticated and highly accurate automatic wire bonder. With an outstanding speed of 0.045 seconds per wire and a repeat accuracy of ±2 µm, the system is state of the art. A variety of components can be bonded thanks to the highly developed loop control. This ball bonder is ideal for fine-pitch and/or long-wire packages.
FB-x26
Fully Automatic Wire Bonder With Wider Area
The Kaijo FB-x26 is a reliable wire bonder designed for larger-sized packages requiring a bonding area of up to 95 mm. It can handle either gold, copper or argentum wire and is also available as a model capable for wafer-level bonding (FB-x26BUMP).
FB-x26BUMP1
Fully Automatic Thermo-Sonic Stud Bump Bonder
The FB-x26BUMP1 is designed for high-speed bump bonding of silicon wafers. It provides thermo-sonic welding of balls from gold, copper or silver wires.
FB-x26BUMP2
Fully Automatic Stud Bump Bonder
The Kaijo FB-x26BUMP2 is designed for high-speed bump bonding of silicon wafers up to 8 inches in diameter. It provides thermo-sonic welding of balls from gold, copper or silver wires.
FB-x26BUMP3
Fully Automatic Stud Bump Bonder
The Kaijo FB-x26BUMP3 is designed for high-speed bump bonding of silicon wafers up to 8 inches in diameter. It provides thermo-sonic welding of balls from gold, copper or silver wires and offers a two-stage mechanism for a significant increase of productivity.
FCV-3000
Advanced Implant Metrology System
The FCV-3000 Advanced Implant Metrology System makes rapid measurement of electrical parameters associated with dielectrics including gate oxides and most near-surface implants including source/drain. The system has excellent sensitivity over a wide range of implant dose.
The system contains a class 1 mini-environment and meets applicable SEMI and CE standards.
FCV Systems use a small elastic probe to form a temporary gate on the dielectric surface. An integrated pattern recognition system locates scribe line test areas.
The elastic probe has a diameter of less than 30 µm for dielectric characterization, and more than 200 µm for surface resistivity measurements, and does not damage the dielectric surface.
Beside the elastic probe, a hard metal probe for 1-pin measurements and a hard metal probe pair for 2-pin measurements are also available which gives a more precise positioning.
